Theoretical spectroscopy of the VNNB defect in hexagonal boron nitride (h-BN) has garnered significant interest due to its potential applications in quantum nanophotonics and material engineering.

One notable study reveals that the VNNB defect exhibits a zero-phonon line emission with Stokes and anti-Stokes phonon sidebands around 6.5 meV and a Debye-Waller factor of 0.59. This indicates a relatively strong electron-phonon interaction, which is crucial for understanding the defect’s optical properties (Arı et al., 2019).

Further investigations into the defect have highlighted its potential in engineering spin defects in h-BN. These spin defects are instrumental for applications in quantum nanophotonics, enabling advancements in the field of quantum information technologies (Kianinia et al., 2020).

Another study explores the conductive properties of “metallic” boron nitride doped with nitrogen impurities, leading to local “metallization” of chemical bonds in initially covalently bonded structures. This metallization can significantly alter the electronic properties of h-BN, paving the way for new applications in electronic devices (Becker et al., 2015).

These findings collectively demonstrate the importance of theoretical spectroscopy in elucidating the properties of the VNNB defect in h-BN and its potential applications in advanced material science and quantum technologies.